In this work 3D simulations are used to study the impact of technological parameters on device performance of c-Si interdigitated\udback-contacted IBC solar cells with point-like doped contacts. In these cells, the highly-doped regions are defined in a point-like\udstructure instead of the more classical arrangement of fully doped fingers. Numerical simulations allow us to optimize rear\udcontact geometry, i.e. optimum pitch between contacts, depending on the substrate resistivity and the passivation quality of base\udcontacts. Results show a trade-off between recombination and base resistive losses demonstrating limit efficiencies over 27% for\uda perfectly passivated structure on p- and n-type substrates. More realistic devices where state-of-the-art surface passivation is\udconsidered reach efficiencies beyond 22% on 2 +- 1 ohmcm substrates with optimum pitch values of 200 +- 50 µm.
展开▼
